Kingston Technology KSM26RS4/16HDI memory module 16 GB 1 x 16 GB DDR4 2666 MHz ECC

SKU

KSM26RS4/16HDI

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In Stock: 65 available

16GB, DDR4, 2666MHz, ECC, CL19, X4, 1.2V, Registered, DIMM, 288-pin

16 internal banks
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported

Category: Memory Modules

More Information

More Information
Internal memory type	DDR4
Memory clock speed	2666 MHz
ECC	Yes
Memory form factor	288-pin DIMM
SKU	KSM26RS4/16HDI
EAN	0740617308181
Manufacturer	Kingston Technology
Availability	In Stock
PDF URLs	View PDF

Description

Kingston's KSM26RS4/16HDI is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx4, ECC, memory module, based on eighteen 2G x 4-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

Specifications

Power
Memory voltage	1.2 V
Design
JEDEC standard	Yes
Technical details
Country of origin	Taiwan
Compliance certificates	RoHS
Memory
Memory layout (modules x size)	1 x 16 GB
Internal memory	16 GB
Component for	PC/Server
Memory form factor	288-pin DIMM
CAS latency	19
Memory voltage	1.2 V
Module configuration	2048M x 72
Row cycle time	46.25 ns
Refresh row cycle time	350 ns
Row active time	32 ns
ECC	Yes
Memory clock speed	2666 MHz
Internal memory type	DDR4
Programming power voltage (VPP)	2.5 V

Features
Memory layout (modules x size)	1 x 16 GB
Internal memory	16 GB
Component for	PC/Server
Memory form factor	288-pin DIMM
CAS latency	19
Memory voltage	1.2 V
Module configuration	2048M x 72
Row cycle time	46.25 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Country of origin	Taiwan
ECC	Yes
Memory clock speed	2666 MHz
Internal memory type	DDR4
Programming power voltage (VPP)	2.5 V
JEDEC standard	Yes
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	133.3 mm
Height	31.2 mm
Logistics data
Harmonized System (HS) code	84733020
Other features
Country of origin	Taiwan
Harmonized System (HS) code	84733020