Kingston Technology KSM32ED8/32HD memory module 32 GB 2 x 16 GB DDR4 3200 MHz ECC

SKU
KSM32ED8/32HD
Login for pricing
In Stock: 47 available
32GB DDR4 3200MT/s ECC Unbuffered DIMM CL22 2Rx8 1.2V 288-pin 16Gbit Hynix D
  • Power Supply: VDD = 1.2V Typical
  • VDDQ = 1.2V Typical
  • VPP = 2.5V Typical
  • VDDSPD = 2.2V to 3.6V
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Dual-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • Temperature sensor with integrated SPD
  • 16 internal banks; 4 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • PCB: Height 1.23” (31.25mm)
  • RoHS Compliant and Halogen-Free
More Information
SKU KSM32ED8/32HD
EAN 0740617348231
Manufacturer Kingston Technology
Availability In Stock
PDF URLs View PDF
Kingston's KSM32ED8/32HD is a 2G x 72-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 2Rx8, ECC, memory module, based on eighteen 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)2 x 16 GB
Internal memory32 GB
Component forServer
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration2048M x 72
Row cycle time45.75 ns
Row active time32 ns
SPD profileYes
Memory channelsDual-channel
Memory ranking2
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)2 x 16 GB
Internal memory32 GB
Component forServer
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Module configuration2048M x 72
Row cycle time45.75 ns
Row active time32 ns
SPD profileYes
Memory channelsDual-channel
Memory ranking2
ECCYes
Memory clock speed3200 MHz
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Memory data transfer rate3200 MT/s
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Compliance certificatesRoHS
Weight & dimensions
Width133.3 mm
Height31.2 mm