Kingston Technology ValueRAM KVR16LS11/8 memory module 8 GB 1 x 8 GB DDR3L 1600 MHz

SKU
KVR16LS11/8
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In Stock: 56 available
ValueRam
  • JEDEC standard 1.35V and 1.5V Power Supply
  • VDDQ = 1.35V and 1.5V
  • 800MHz fCK for 1600Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB: Height 1.18” (30mm), double sided component
More Information
Internal memory type DDR3L
Memory clock speed 1600 MHz
ECC No
Memory form factor 204-pin SO-DIMM
SKU KVR16LS11/8
EAN 0740617219791
Manufacturer Kingston Technology
Availability In Stock
Product Family ValueRAM
Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.
Power
Memory voltage1.35,1.5 V
Technical details
Memory layout1 x 8192 MB
Internal memory8192 MB
Chips organisationX8
Error indicationNo
Country of originTaiwan
Bus clock rate1600 MHz
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forLaptop
Memory form factor204-pin SO-DIMM
CAS latency11
Memory voltage1.35,1.5 V
Memory bus64 bit
Lead platingGold
Module configuration1G X 64
Row cycle time48.125 ns
Refresh row cycle time260 ns
Row active time35 ns
ECCNo
Memory clock speed1600 MHz
Internal memory typeDDR3L
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forLaptop
Memory form factor204-pin SO-DIMM
CAS latency11
Memory voltage1.35,1.5 V
Memory bus64 bit
Lead platingGold
Module configuration1G X 64
Row cycle time48.125 ns
Refresh row cycle time260 ns
Row active time35 ns
Country of originTaiwan
ECCNo
Memory clock speed1600 MHz
Internal memory typeDDR3L
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Weight & dimensions
Width67.6 mm
Height30 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Memory layout1 x 8192 MB
Internal memory8192 MB
Chips organisationX8
Error indicationNo
Country of originTaiwan
Bus clock rate1600 MHz
Harmonized System (HS) code84733020