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Kingston Technology ValueRAM KVR32S22S6/4 memory module 4 GB 1 x 4 GB DDR4 3200 MHz
SKU
KVR32S22S6/4
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.18” (30.00mm)
- RoHS Compliant and Halogen-Free
Category: Memory Modules
| Internal memory type | DDR4 |
|---|---|
| Memory clock speed | 3200 MHz |
| ECC | No |
| Memory form factor | 260-pin SO-DIMM |
| SKU | KVR32S22S6/4 |
| EAN | 0740617296105 |
| Manufacturer | Kingston Technology |
| Availability | In Stock |
| Product Family | ValueRAM |
| PDF URLs |
View PDF |
ValueRAM, Kingston’s industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.
| Power | |
|---|---|
| Memory voltage | 1.2 V |
| Technical details | |
| Country of origin | Taiwan |
| Doesn't contain | Halogen |
| Compliance certificates | RoHS |
| Memory | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | Laptop |
| Memory form factor | 260-pin SO-DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| ECC | No |
| Memory clock speed | 3200 MHz |
| Internal memory type | DDR4 |
| Features | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | Laptop |
| Memory form factor | 260-pin SO-DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| Country of origin | Taiwan |
| ECC | No |
| Memory clock speed | 3200 MHz |
| Internal memory type | DDR4 |
| Harmonized System (HS) code | 84733020 |
| Operational conditions | |
|---|---|
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Sustainability | |
| Doesn't contain | Halogen |
| Weight & dimensions | |
| Width | 69.6 mm |
| Height | 30 mm |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Country of origin | Taiwan |
| Harmonized System (HS) code | 84733020 |